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Please use this identifier to cite or link to this item: http://repositorio.ufla.br/jspui/handle/1/12586

Title: Ambipolar diffusion and spatial and time-resolved spectroscopies in semiconductor heterostructures
???metadata.dc.creator???: Vasconcellos, Áurea R.
Brasil, M. J. S. P.
Luzzi, Roberto
Silva, A. A. P
Leite, A. H. S.
Keywords: Ambipolar diffusion
Semiconductor devices
Publisher: AIP Publishing
Issue Date: 2009
Citation: VASCONCELLOS, A. R. et al. Ambipolar diffusion and spatial and time-resolved spectroscopies in semiconductor heterostructures. Journal of Applied Physics, [S. l.], v. 106, 2009. Não paginado. Registro DOI: http://dx.doi.org/10.1063/1.3173176.
Abstract: An analysis of the hydrodynamic motion of the fluid of photoinjected carriers in polar semiconductors is presented. Experiments of time-resolved photoluminescence, which provide relevant insights into the dynamical behavior of heterostructures, are analyzed. We study the propagation and recombination of carriers in semiconductor devices with a large cap layer, where carriers are photoinjected, and a quantum well where they recombine. The movement of the photoinjected, and away from equilibrium, carriers along such cap layer consists, to a good degree of approximation, in an ambipolar diffusivelike one, which decays in time as a result of recombination and the coupling, via Coulomb interaction, with the optical and acoustic plasma waves. The density of the electrons arriving at the interface with the quantum well can be determined; these electrons are transferred through the interface to recombine in the quantum well, and the resulting intensity of the time-resolved luminescence is obtained. Comparison with experimental data shows a good agreement.
URI: http://aip.scitation.org/doi/10.1063/1.3173176
???metadata.dc.language???: en_US
Appears in Collections:DEX - Artigos publicados em periódicos

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