Please use this identifier to cite or link to this item: http://repositorio.ufla.br/jspui/handle/1/36574
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dc.creatorNascimento, Raphael Aparecido Sanches-
dc.creatorMulato, Marcelo-
dc.date.accessioned2019-09-04T11:18:24Z-
dc.date.available2019-09-04T11:18:24Z-
dc.date.issued2017-
dc.identifier.citationNASCIMENTO, R. A. S.; MULATO, M. Mechanisms of ion detection for FET-sensors using FTO: role of cleaning process, pH sequence and electrical resistivity. Materials Research, São Carlos, v. 20, n. 5, Oct. 2017.pt_BR
dc.identifier.urihttp://repositorio.ufla.br/jspui/handle/1/36574-
dc.description.abstractThe use of FTO samples as an extended gate field effect transistor biosensor is presented. The FTO samples were produced by spray pyrolysis technique. The cleaning process is shown to have a fundamental importance for the final sensitivity of the samples when multiple re-usage is adopted. The role of electrical resistivity and morphology of the films are investigated. The influence of pH sequence of measurements from 2 to 12 is presented. Both increasing and decreasing the pH values sequence of measurements are compared. Electrical, morphological, time evolution and electrochemical experiments are correlated in the main discussion. A physical-chemical model is presented to explain the main mechanisms of charge adsorption and desorption. Parameters not commonly reported in the literature are proven to have fundamental importance in sensors behavior and characterization.pt_BR
dc.languageen_USpt_BR
dc.rightsAttribution 4.0 International*
dc.rightsacesso abertopt_BR
dc.rights.urihttp://creativecommons.org/licenses/by/4.0/*
dc.sourceMaterials Researchpt_BR
dc.subjectBiosensorpt_BR
dc.subjectFluorine Tin Oxide (FTO)pt_BR
dc.subjectpH sensorpt_BR
dc.subjectExtended Gate Field Effect Transistor (EGFET)pt_BR
dc.titleMechanisms of ion detection for FET-sensors using FTO: role of cleaning process, pH sequence and electrical resistivitypt_BR
dc.typeArtigopt_BR
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