Please use this identifier to cite or link to this item: http://repositorio.ufla.br/jspui/handle/1/34500
Title: Investigation on interface-related defects by photoluminescence of cubic (Al)GaN/AlN multi-quantum wells structures
Keywords: C-GaN
Interface defects
Localization states
Defeitos de interface
Estados de localização
Issue Date: Jun-2018
Publisher: Elsevier
Citation: HERVAL, L. K. S. et al. Investigation on interface-related defects by photoluminescence of cubic (Al)GaN/AlN multi-quantum wells structures. Journal of Luminescence, Amsterdam, v. 198, p. 309-313, June 2018.
Abstract: Cubic (Al)GaN/AlN multiple quantum wells were grown by plasma assisted molecular beam epitaxy with three different configurations at interfaces. We employ temperature-dependent photoluminescence to characterize interface imperfections. Our results show shallow localization states responsible to photocarrier localization at low temperatures. The potential fluctuation model estimates localization energies in the order of few meV. We investigated a single GaN/AlN, double GaN/AlN quantum wells, and a double quantum well with an additional AlGaN spacer layer as a step between the wells. The introduction of AlN and AlGaN interlayer reduces the effect of localization and indicates better interfaces for the QW structures based on cubic GaN.
URI: https://www.sciencedirect.com/science/article/pii/S0022231317318793
http://repositorio.ufla.br/jspui/handle/1/34500
Appears in Collections:DFI - Artigos publicados em periódicos

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