Please use this identifier to cite or link to this item: http://repositorio.ufla.br/jspui/handle/1/42683
Title: Tuning the Schottky barrier height in graphene/monolayer-GeI2 van der Waals heterostructure
Keywords: Metal-semiconductor
Optoelectronic devices
Electronic Schottky devices
Barreiras Schottky
Heteroestruturas de grafeno
Dispositivos optoeletrônicos
Semicondutores
Issue Date: May-2020
Publisher: IOP Publishing
Citation: DEUS, D. P. de A.; OLIVEIRA, I. S. S. de. Tuning the Schottky barrier height in graphene/monolayer-GeI2 van der Waals heterostructure. Journal of Physics: Condensed Matter, [S. I.], v. 32, n. 35, 2020.
Abstract: We use first-principles simulations to investigate the structural and electronic properties of a heterostructure formed by graphene and monolayer GeI2 (m-GeI2). While graphene has been extensively studied in the last 15 years, m-GeI2 has been recently proposed to be a stable 2D semiconductor with a wide-band gap, Liu et al (2018 J. Phys. Chem. C 122 22137). By staking both structures we obtain a metal-semiconductor junction, with great potential for applications in the designing of new (opto)electronic devices. The results show that the graphene Dirac cone is preserved in the graphene/m-GeI2 heterostructure. We find that there are no chemical bonds at the graphene and m-GeI2 interface, thus the heterostructure interactions are ruled by van der Waals (vdW) forces. The interface between graphene and m-GeI2 results in a n-type Schottky contact. Furthermore, we show that a transition from n-type to p-type Schottky contact can be obtained by decreasing the interlayer distance. We also modulated the Schottky barrier heights by applying a perpendicular external electric field through the vdW heterostructure. In particular, positive values resulted in an increase of the n-type Schottky barrier height, while negative electric field values induced a transition from n-type to p-type Schottky contact. From our results, we show that m-GeI2 is an interesting material to design new electronic Schottky devices based on graphene vdW heterostructures.
URI: https://iopscience.iop.org/article/10.1088/1361-648X/ab8bf8
http://repositorio.ufla.br/jspui/handle/1/42683
Appears in Collections:DFI - Artigos publicados em periódicos

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