Use este identificador para citar ou linkar para este item: http://repositorio.ufla.br/jspui/handle/1/58959
Título: Zinc oxide films deposited on FTO substrate by hydrothermal microwave-assisted method
Palavras-chave: Filmes finos
Óxido de zinco
Filmes nanoestruturados de ZnO
Micro-ondas-hidrotérmico
Data do documento: 1-Ago-2022
Editor: Springer Nature
Citação: SOUZA, Graziela de; NERY, Luís Henrique; MALAFATTI, João Otávio D.; DIAS, Jeferson Almeida; PARIS, Elaine Cristina; KLEIN-GUNNEWIEK, Rodolfo Foster; GIRALDI, Tania Regina. Zinc oxide films deposited on FTO substrate by hydrothermal microwave-assisted method. MRS Communications, Pittsburgh, v. 12, p. 409–414, Aug. 2022. DOI: https://doi.org/10.1557/s43579-022-00189-2.
Resumo: This study aimed to prepare nanostructured ZnO films deposited on FTO substrate by microwave-hydrothermal method. The effects of synthesis time and post-synthesis heat treatment were assessed. ZnO films exhibited a wurtzite structure and a band gap in the range of 3.2 to 3.4 eV. Microwave time influenced film morphology, which varied from lamellar structures (10 min of microwave exposure) to spherical particles (30 min of microwave exposure). Post-synthesis heat treatment removed synthesis residues, increasing film purity and resulting in spherical particles with porous surfaces. These characteristics enhanced the photocatalytic properties of films for degradation of rhodamine B. The findings of this study underscore the importance of microwave conditions in the synthesis of ZnO films with semiconductor properties.
URI: https://link.springer.com/article/10.1557/s43579-022-00189-2#citeas
http://repositorio.ufla.br/jspui/handle/1/58959
Aparece nas coleções:Departamento de Tecnologia - Artigos publicados em periódicos

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