Silício no desenvolvimento morfofisiológico de mudas de maracujazeiro amarelo

Abstract

The aim of this study was to improve the final quality of the seedlings of yellow passion fruit by adding silicon to the substrate and check the silicon accumulation by the plants. The experiment was conducted in a greenhouse located at the Department of Agriculture, Federal University of Lavras (UFLA). Passion fruit seeds (Passiflora edulis Sims. F. Flavicarpa Deg.) were sown in polystyrene trays until sized reached enough to be transplanted to pots. After 60 days the seedlings with about 15 cm of tall were transplanted in a plastic pots containing 1.1 kg of Tropstrato® substrate. The seedlings randomly arranged on the counter in greenhouse were irrigated daily in order to supplement their water needs. The treatments consisted of four concentrations (0, 0.28, 0.55 and 0.83 g / pot) of silicon in the form of silicic acid solution (SiO2.XH2O) 1%. This solution was applied around the stems of the plants (drench), the first application were at 15 days after the seedlings transplanting. In total were realized three applications with intervals of 15 days. The pots that constituted the control treatment received water in the same amount. After the last application, the plants were subjected to chemical analysis of silicon concentration, X-ray microanalysis, flow cytometry, anatomy, photosynthetic activity, ultrastructural characteristics and analysis phytotechnical. It can be concluded that silicon provides better growth and development of seedlings, concentrations between 0.28 and 0.55 g / pot, the silicon absorption and deposition in passion fruit leaves are proportional to the availability of this element for the plant and plant genetic stability is preserved in the passion fruit treated with silicon Furthermore, this element provides anatomical changes, such as increasing the thickness of the adaxial epidermis and the reduction of palisade parenchyma, also interfering in the photosynthetic apparatus of plants.